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| TP5335 P-Channel Enhancement-Mode Vertical DMOS FET Features High input impedance and high gain Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode Free from secondary breakdown Complementary N- and P-channel devices General Description The Supertex TP5335 is a low threshold enhancementmode (normally-off) transistor utilizing an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications Logic level interfaces - ideal for TTL and CMOS Solid state relays Analog switches Power management Telecom switches Ordering Information BVDSs/ BVDGs -350V RDS(ON) (max) Pin Configuration Package Options TO-236AB TP5335K1 TP5335K1-G Drain VGS(TH) (max) 30 -2.4V -G indicates package is RoHS compliant (`Green') Gate Source TO-236AB (Top View) Absolute Maximum Ratings Parameter Drain-to-source voltage Drain-to-gate voltage Gate-to-source voltage Operating and storage temperature Soldering temperature* Value BVDSS BVDGS 20V -55OC to +150OC 300OC Product Marking Information Product marking for SOT-23: P3S where = 2-week alpha date code Underline indicates Pb-Free ("Green") Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. *Distance of 1.6mm from case for 10 seconds. TP5335 Thermal Characteristics Package TO-236AB ID (continuous)1 -85mA ID (pulsed) -400mA Power Dissipation @TA = 25OC 0.36W jc (OC/W) 200 ja (OC/W) 350 IDR1 -85mA IDRM -400mA Notes: 1. ID (continuous) is limited by max rated Tj. Electrical Characteristics (@25OC unless otherwise specified) Symbol Parameter Min Typ Max Units Conditions BVDSS VGS(TH) VGS(TH) IGSS Drain-to-source breakdown voltage Gate threshold voltage Change in VGS(TH) with temperature Gate body leakage current -350 -1.0 - 800 -2.4 4.5 -100 -10 -1.0 -5.0 75 30 1.7 110 60 22 20 15 25 25 -1.8 - V V mV/OC nA A mA nA mA %/ C mmho pF O VGS = 0V, ID = -100A VDS = VGS, ID = -1.0mA VDS = VGS, ID = -1.0mA VGS = 20V, VDS = 0V VDS = Max rating, VGS = 0V VDS = 0.8 Max Rating, VGS = 0V, TA = 125OC VGS = 0V, VDS = -330V VGS = -4.5V, VDS = -25V VGS = -10V, VDS = -25V VGS = -4.5V, ID = -150mA VGS = -10V, ID = -200mA VGS = -10V, ID = -200mA VDS = -25V, ID = -200mA VGS = 0V, VDS = -25V, f = 1MHz VDD = -25V, ID = -150mA, RGEN = 25, VGS = 0V, ISD = -200mA VGS = 0V, ISD = -200mA IDSS Zero gate voltage drain current - ID(ON) RDS(ON) RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr ON-State drain current Static drain-to-source ON-state resistance Change in RDS(ON) with temperature Forward transconductance Input capacitance Common source output capacitance Reverse transfer capacitance Turn-ON delay time Rise time Turn-OFF delay time Fall time Diode forward voltage drop Reverse recovery time -200 -400 125 - ns V ns Notes: 1.All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2.All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V 10% INPUT -10V PULSE GENERATOR 90% t(OFF) tr td(OFF) tF INPUT RGEN D.U.T. OUTPUT RL 10% t(ON) td(ON) 0V 90% OUTPUT VDD 90% 10% VDD 2 TP5335 3-Lead TO-236AB (SOT-23) Package Outline (K1) 0.0173 0.0027 (0.4394 0.0685) 0.0906 0.0079 (2.299 0.199) 1 3 0.0512 0.004 2 (1.3004 0.1016) Measurement Legend = 0.0207 0.003 Dimensions in Inches (Dimensions in Millimeters) 0.0754 0.0053 (1.915 0.135) (0.5257 0.0762) Top View 0.115 0.005 (2.920 0.121) 0.0400 0.007 (1.016 0.178) 0.0210 0.003 (0.5334 0.076) 0.0382 0.003 (0.9690 0.0762) 0.0043 0.0009 (0.1092 0.0229) 0.0035 0.0025 (0.0889 0.0635) 0.0197 (0.50) NOM Side View End View (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Doc.# DSFP-TP5335 A032707 3 |
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